Wave pipeline

ABSTRACT

A wave pipeline includes a first stage, a plurality of second stages, and a third stage. The first stage receives a data signal representative of data and a clock signal, and may process the data at a first data rate equal to a clock rate of the clock signal. Each second stage may process respective data in response to a respective clock cycle received from the first stage at a second data rate equal to the first data rate times the number of second stages. The third stage may process data received from each second stage at the first data rate. The first stage divides the data signal and the clock signal between the plurality of second stages. The third stage merges the respective data and the respective clock cycles from each of the plurality of second stages to provide a merged data signal and a return clock signal.

RELATED APPLICATION

This application is a Divisional of U.S. application Ser. No.15/834,279, titled “WAVE PIPELINE,” filed Dec. 7, 2017, (allowed) whichis commonly assigned and incorporated herein by reference.

TECHNICAL FIELD

The present disclosure relates generally to signal timing in integratedcircuit devices. In particular, in one or more embodiments, the presentdisclosure relates to a wave pipeline data path including an N-way stagein a memory device, where N is at least two.

BACKGROUND

Memory devices are typically provided as internal, semiconductor,integrated circuit devices in computers or other electronic devices.There are many different types of memory including random-access memory(RAM), read only memory (ROM), dynamic random access memory (DRAM),synchronous dynamic random access memory (SDRAM), and flash memory.

Flash memory devices have developed into a popular source ofnon-volatile memory for a wide range of electronic applications. Flashmemory devices typically use a one-transistor memory cell that allowsfor high memory densities, high reliability, and low power consumption.Changes in threshold voltage of the memory cells, through programming(which is often referred to as writing) of charge storage structures(e.g., floating gates or charge traps) or other physical phenomena(e.g., phase change or polarization), determine the data value of eachcell. Common uses for flash memory include personal computers, tabletcomputers, digital cameras, digital media players, cellular telephones,solid state drives and removable memory modules, and the uses aregrowing.

A wave pipeline may be used in a data path to send or receive databetween different parts of an integrated circuit, such as a memorydevice. For correct operation of a wave pipeline, two conditionstypically must be met. First, in each stage of the wave pipeline thedata and the clock signal should be delayed by the same amount of time.Second, each stage should be ready for the next coming clock cycle ofthe clock signal. This second condition limits the data rate of eachstage by generally requiring the data rate to be equal to or faster thanthe clock rate. Thus, the second condition limits the time available foreach stage to complete a full operation and be ready for the next inputto a single clock cycle.

For the reasons stated above, and for other reasons stated below whichwill become apparent to those skilled in the art upon reading andunderstanding the present specification, there is a need in the art foralternative methods for processing data through a wave pipeline, andsystem and apparatus to perform such methods.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a simplified block diagram of one embodiment of a memorydevice in communication with a processor as part of an electronicsystem.

FIGS. 2A-2B are schematic diagrams of portions of an array of memorycells as could be used in a memory device of the type described withreference to FIG. 1.

FIG. 3 is a schematic diagram illustrating one embodiment of a wavepipeline.

FIG. 4 is a schematic diagram illustrating one embodiment of an outputdata path.

FIG. 5 is a timing diagram illustrating one embodiment of the data andclock signals of the output data path described with reference to FIG.4.

FIG. 6 is a timing diagram illustrating one embodiment of the triggeringof data out of a sense amplifier of the output data path described withreference to FIG. 4.

FIG. 7 is a timing diagram illustrating one embodiment of the latchingof data into the first in first out (FIFO) of the output data pathdescribed with reference to FIG. 4.

FIG. 8 is a schematic diagram illustrating one embodiment of an inputdata path.

FIG. 9 is a schematic diagram illustrating another embodiment of anoutput data path.

FIG. 10 is a schematic diagram illustrating another embodiment of anoutput data path.

FIG. 11 is a flow diagram illustrating one embodiment of a method forprocessing data through a wave pipeline.

FIG. 12 is a flow diagram illustrating one embodiment of a method forreading data from an array of memory cells.

FIG. 13 is a flow diagram illustrating one embodiment of a method forwriting data to an array of memory cells.

DETAILED DESCRIPTION

In the following detailed description, reference is made to theaccompanying drawings that form a part hereof, and in which is shown, byway of illustration, specific embodiments. In the drawings, likereference numerals describe substantially similar components throughoutthe several views. Other embodiments may be utilized and structural,logical and electrical changes may be made without departing from thescope of the present disclosure. The following detailed description is,therefore, not to be taken in a limiting sense.

To satisfy the two conditions for the correct operation of a wavepipeline (i.e., in each stage of the wave pipeline the data and theclock signal should be delayed by the same amount of time and each stageshould be ready for the next coming clock cycle of the clock signal),the clock rate may need to be reduced to satisfy the slowest stage inthe wave pipeline. When the clock rate is reduced, a wider data bus maybe used to satisfy data rate requirements. For example, to satisfy datarate requirements for a data path including a stage using 14 ns toprocess data through the stage, a 128 bit bus running at a 20 ns clockrate may be used instead of a 64 bit bus running at a 10 ns clock rate.Accordingly, this disclosure describes embodiments for accommodatingslower stages within a wave pipeline of a data path without reducing theclock rate and thus not increasing the width of the data bus to satisfythe data rate requirements.

FIG. 1 is a simplified block diagram of a first apparatus, in the formof a memory device 100, in communication with a second apparatus, in theform of a processor 130, as part of a third apparatus, in the form of anelectronic system, according to an embodiment. Some examples ofelectronic systems include personal computers, tablet computers, digitalcameras, digital media players, digital recorders, games, appliances,vehicles, wireless devices, cellular telephones and the like. Theprocessor 130, e.g., a controller external to the memory device 100, maybe a memory controller or other external host device.

Memory device 100 includes clock-data tracking that may facilitate animproved setup and hold time margin when reading data out of memorydevice 100. A clock signal path 126 may be routed along with a data bus128. A return clock signal path 127 also may be routed along with thedata bus 128. A clock signal on the clock signal path 126 may be used totrigger data out of the sensing devices 106 (e.g., sense amplifiers). Areturn clock signal on the return clock signal path 127 may be used tolatch the data from the sensing devices 106 into a data latch (e.g.,FIFO) of input/output (I/O) control circuitry 112 just prior tooutputting the data to processor 130. By routing the clock signal andreturn clock signal along with the data, they may be subjected to thesame logic circuitry and process, voltage, and temperature (PVT)variations as the data, and the setup and hold time margin at the datalatch may be improved. It will be recognized that process variationstypically experienced in fabrication will generally lead to variationsin performance of circuits, even where those circuits are intended to beof the same design or otherwise provide the same functionality.Similarly, even small separations of circuits may expose those circuitsto differing voltage and temperature values if measured to sufficientprecision. Thus, while this disclosure seeks to mitigate the effects ofsuch variations between clock signal paths and data paths, there is noexpectation that such variations are necessarily eliminated.

Memory device 100 includes an array of memory cells 104 logicallyarranged in rows and columns. Memory cells of a logical row aretypically coupled to the same access line (commonly referred to as aword line) while memory cells of a logical column are typicallyselectively coupled to the same data line (commonly referred to as a bitline). A single access line may be associated with more than one logicalrow of memory cells and a single data line may be associated with morethan one logical column. Memory cells (not shown in FIG. 1) of at leasta portion of array of memory cells 104 are capable of being programmedto one of at least two data states.

A row decode circuitry 108 and a column decode circuitry 110 areprovided to decode address signals. Address signals are received anddecoded to access the array of memory cells 104. Memory device 100 alsoincludes I/O control circuitry 112 to manage input of commands,addresses and data to the memory device 100 as well as output of dataand status information from the memory device 100. An address register114 is in communication with I/O control circuitry 112 and row decodecircuitry 108 and column decode circuitry 110 to latch the addresssignals prior to decoding. A command register 124 is in communicationwith I/O control circuitry 112 and control logic 116 to latch incomingcommands.

An internal controller (e.g., control logic 116) controls access to thearray of memory cells 104 in response to the commands and generatesstatus information for the external processor 130, i.e., control logic116 is configured to perform access operations in accordance withembodiments described herein. The control logic 116 is in communicationwith row decode circuitry 108 and column decode circuitry 110 to controlthe row decode circuitry 108 and column decode circuitry 110 in responseto the addresses.

Control logic 116 is also in communication with a cache register 118.Cache register 118 latches data, either incoming or outgoing, asdirected by control logic 116 to temporarily store data while the arrayof memory cells 104 is busy writing or reading, respectively, otherdata. During a program operation (e.g., write operation), data is passedfrom sensing devices 106 to the cache register 118. The data is thenpassed from the cache register 118 to data register 120 for transfer tothe array of memory cells 104; then new data is latched in the cacheregister 118 from sensing devices 106, which receive the new data fromthe I/O control circuitry 112. During a read operation, data is passedfrom the cache register 118 to sensing devices 106, which pass the datato the I/O control circuitry 112 for output to the external processor130; then new data is passed from the data register 120 to the cacheregister 118. A status register 122 is in communication with I/O controlcircuitry 112 and control logic 116 to latch the status information foroutput to the processor 130.

Memory device 100 receives control signals at control logic 116 fromprocessor 130 over a control link 132. The control signals may includeat least a chip enable CE#, a command latch enable CLE, an address latchenable ALE, a write enable WE#, and a read enable RE#. Additionalcontrol signals (not shown) may be further received over control link132 depending upon the nature of the memory device 100. Memory device100 receives command signals (which represent commands), address signals(which represent addresses), and data signals (which represent data)from processor 130 over a multiplexed input/output (I/O) bus 134 andoutputs data to processor 130 over I/O bus 134.

For example, the commands are received over input/output (I/O) pins[7:0] of I/O bus 134 at I/O control circuitry 112 and are written intocommand register 124. The addresses are received over input/output (I/O)pins [7:0] of bus 134 at I/O control circuitry 112 and are written intoaddress register 114. The data are received over input/output (I/O) pins[7:0] for an 8-bit device or input/output (I/O) pins [15:0] for a 16-bitdevice at I/O control circuitry 112 and are written into cache register118 through sensing devices 106. The data are subsequently written intodata register 120 for programming the array of memory cells 104. Foranother embodiment, cache register 118 may be omitted, and the data arewritten directly into data register 120 through sensing devices 106.Data are also output over input/output (I/O) pins [7:0] for an 8-bitdevice or input/output (I/O) pins [15:0] for a 16-bit device.

It will be appreciated by those skilled in the art that additionalcircuitry and signals can be provided, and that the memory device ofFIG. 1 has been simplified. It should be recognized that thefunctionality of the various block components described with referenceto FIG. 1 may not necessarily be segregated to distinct components orcomponent portions of an integrated circuit device. For example, asingle component or component portion of an integrated circuit devicecould be adapted to perform the functionality of more than one blockcomponent of FIG. 1. Alternatively, one or more components or componentportions of an integrated circuit device could be combined to performthe functionality of a single block component of FIG. 1.

Additionally, while specific I/O pins are described in accordance withpopular conventions for receipt and output of the various signals, it isnoted that other combinations or numbers of I/O pins may be used in thevarious embodiments.

FIG. 2A is a schematic of a NAND memory array 200A, e.g., as a portionof array of memory cells 104. Memory array 200A includes access lines,such as word lines 202 ₀ to 202 _(N), and data lines, such as bit lines204 ₀ to 204 _(M). The word lines 202 may be coupled to global accesslines (e.g., global word lines), not shown in FIG. 2A, in a many-to-onerelationship. For some embodiments, memory array 200A may be formed overa semiconductor that, for example, may be conductively doped to have aconductivity type, such as a p-type conductivity, e.g., to form ap-well, or an n-type conductivity, e.g., to form an n-well.

Memory array 200A might be arranged in rows (each corresponding to aword line 202) and columns (each corresponding to a bit line 204). Eachcolumn may include a string of series-coupled memory cells, such as oneof NAND strings 206 ₀ to 206 _(M). Each NAND string 206 might be coupledto a common source 216 and might include memory cells 208 ₀ to 208 _(N).The memory cells 208 represent non-volatile memory cells for storage ofdata. The memory cells 208 of each NAND string 206 might be connected inseries between a select transistor 210 (e.g., a field-effecttransistor), such as one of the select transistors 210 ₀ to 210 _(M)(e.g., that may be source select transistors, commonly referred to asselect gate source), and a select transistor 212 (e.g., a field-effecttransistor), such as one of the select transistors 212 ₀ to 212 _(M)(e.g., that may be drain select transistors, commonly referred to asselect gate drain). Select transistors 210 ₀ to 210 _(M) might becommonly coupled to a select line 214, such as a source select line, andselect transistors 212 ₀ to 212 _(M) might be commonly coupled to aselect line 215, such as a drain select line.

A source of each select transistor 210 might be connected to commonsource 216. The drain of each select transistor 210 might be connectedto the source of a memory cell 208 ₀ of the corresponding NAND string206. For example, the drain of select transistor 210 ₀ might beconnected to the source of memory cell 208 ₀ of the corresponding NANDstring 206 ₀. Therefore, each select transistor 210 might be configuredto selectively couple a corresponding NAND string 206 to common source216. A control gate of each select transistor 210 might be connected toselect line 214.

The drain of each select transistor 212 might be connected to the bitline 204 for the corresponding NAND string 206. For example, the drainof select transistor 212 ₀ might be connected to the bit line 204 ₀ forthe corresponding NAND string 206 ₀. The source of each selecttransistor 212 might be connected to the drain of a memory cell 208 _(N)of the corresponding NAND string 206. For example, the source of selecttransistor 212 ₀ might be connected to the drain of memory cell 208 _(N)of the corresponding NAND string 206 ₀. Therefore, each selecttransistor 212 might be configured to selectively couple a correspondingNAND string 206 to a corresponding bit line 204. A control gate of eachselect transistor 212 might be connected to select line 215.

The memory array in FIG. 2A might be a quasi-two-dimensional memoryarray and might have a generally planar structure, e.g., where thecommon source 216, strings 206 and bit lines 204 extend in substantiallyparallel planes. Alternatively, the memory array in FIG. 2A might be athree-dimensional memory array, e.g., where strings 206 may extendsubstantially perpendicular to a plane containing the common source 216and to a plane containing the bit lines 204 that may be substantiallyparallel to the plane containing the common source 216.

Typical construction of memory cells 208 includes a data-storagestructure 234 (e.g., a floating gate, charge trap, etc.) that candetermine a data value of the cell (e.g., through changes in thresholdvoltage), and a control gate 236, as shown in FIG. 2A. Memory cells 208may further have a defined source 230 and a defined drain 232. Memorycells 208 have their control gates 236 coupled to (and in some casesform) a word line 202.

A column of the memory cells 208 is a NAND string 206 or a plurality ofNAND strings 206 coupled to a given bit line 204. A row of the memorycells 208 are memory cells 208 commonly coupled to a given word line202. A row of memory cells 208 can, but need not include all memorycells 208 commonly coupled to a given word line 202. Rows of memorycells 208 may often be divided into one or more groups of physical pagesof memory cells 208, and physical pages of memory cells 208 ofteninclude every other memory cell 208 commonly coupled to a given wordline 202. For example, memory cells 208 commonly coupled to word line202 _(N) and selectively coupled to even bit lines 204 (e.g., bit lines204 ₀, 204 ₂, 204 ₄, etc.) may be one physical page of memory cells 208(e.g., even memory cells) while memory cells 208 commonly coupled toword line 202 _(N) and selectively coupled to odd bit lines 204 (e.g.,bit lines 204 ₁, 204 ₃, 204 ₅, etc.) may be another physical page ofmemory cells 208 (e.g., odd memory cells). Although bit lines 204 ₃ 204₅ are not expressly depicted in FIG. 2A, it is apparent from the figurethat the bit lines 204 of the array of memory cells 200A may be numberedconsecutively from bit line 204 ₀ to bit line 204 _(M). Other groupingsof memory cells 208 commonly coupled to a given word line 202 may alsodefine a physical page of memory cells 208. For certain memory devices,all memory cells commonly coupled to a given word line might be deemed aphysical page. The portion of a physical page (which, in someembodiments, could still be the entire row) that is read during a singleread operation or programmed during a program operation (e.g., an upperor lower page memory cells) might be deemed a logical page.

FIG. 2B is another schematic of a portion of an array of memory cells200B as could be used in a memory of the type described with referenceto FIG. 1, e.g., as a portion of array of memory cells 104. Likenumbered elements in FIG. 2B correspond to the description as providedwith respect to FIG. 2A. FIG. 2B provides additional detail of oneexample of a three-dimensional NAND memory array structure. Thethree-dimensional NAND memory array 200B may incorporate verticalstructures which may include semiconductor pillars where a portion of apillar may act as a channel region of the memory cells of NAND strings206. The NAND strings 206 may be each selectively connected to a bitline 204 ₀-204 _(M) by a select transistor 212 (e.g., that may be drainselect transistors, commonly referred to as select gate drain) and to acommon source 216 by a select transistor 210 (e.g., that may be sourceselect transistors, commonly referred to as select gate source).Multiple NAND strings 206 might be selectively connected to the same bitline 204. Subsets of NAND strings 206 can be connected to theirrespective bit lines 204 by biasing the select lines 215 ₀-215 _(L) toselectively activate particular select transistors 212 each between aNAND string 206 and a bit line 204. The select transistors 210 can beactivated by biasing the select line 214. Each word line 202 may beconnected to multiple rows of memory cells of the memory array 200B.Rows of memory cells that are commonly connected to each other by aparticular word line 202 may collectively be referred to as tiers.

Although the examples of FIGS. 2A-2B are discussed in conjunction withNAND flash, the embodiments described herein are not limited to aparticular array architecture or structure, and can include otherstructures (e.g., cross-point memory, DRAM, etc.) and otherarchitectures (e.g., AND arrays, NOR arrays, etc.).

FIG. 3 is a schematic diagram illustrating one embodiment of a wavepipeline 300. In one example, wave pipeline 300 is a portion of thememory device 100 previously described and illustrated with reference toFIG. 1. Wave pipeline 300 includes a first stage 306, a plurality (i.e.,group) of second stages 312 ₁ to 312 _(N) where “N” is any suitablenumber of second stages, a third stage 318, and a data latch 328 (e.g.,a first in first out (FIFO) circuit). First stage 306 includes a datapath 308 and a corresponding clock path 310. Each second stage 312 ₁ to312 _(N) includes a data path 314 ₁ to 314 _(N) and a correspondingclock path 316 ₁ to 316 _(N), respectively. Third stage 318 includes adata path 320 and a corresponding clock path 322.

The input of data path 308 of first stage 306 is communicatively coupledto a data signal node 302. Communicatively coupled components may becoupled by a single bit signal path or a multiple bit parallel signalpath. The input of clock path 310 of first stage 306 is electricallycoupled to a clock signal node 304. The output of data path 308 of firststage 306 is communicatively coupled to an input of data path 314 ₁ to314 _(N) of second stage 312 ₁ to 312 _(N) through a data signal path309 ₁ to 309 _(N), respectively. The output of clock path 310 of firststage 306 is electrically coupled to an input of clock path 316 ₁ to 316_(N) of second stage 312 ₁ to 312 _(N) through a clock signal path 311 ₁to 311 _(N), respectively. The output of data path 314 ₁ to 314 _(N) ofsecond stage 312 ₁ to 312 _(N) is communicatively coupled to the inputof data path 320 of third stage 318 through a data signal path 315 ₁ to315 _(N), respectively. The output of clock path 316 ₁ to 316 _(N) ofsecond stage 312 ₁ to 312 _(N) is electrically coupled to the input ofclock path 322 of third stage 318 through a clock signal path 317 ₁ to317 _(N), respectively. The output of data path 320 of third stage 318is communicatively coupled to the data input of data latch 328 through adata signal path 324. The output of clock path 322 of third stage 318 iselectrically coupled to the entrance clock input of data latch 328through a return clock signal path 326. The data output of data latch328 is electrically coupled to an output data node 330. The exit clockinput of data latch 328 is electrically coupled to a clock signal node332. In other examples, wave pipeline 300 may include additional stagesprior to first stage 306 and/or between third stage 318 and data latch328.

First stage 306 receives a data signal from data signal node 302 alignedwith a clock signal on clock signal node 304. With the signals aligned,the data is expected to be valid at a corresponding transition of thecorresponding clock cycle of the clock signal. First stage 306 mayprocess data in response to the clock signal at a first data rate equalto the clock rate of the clock signal. The delay of data through datapath 308 may be substantially equal to (e.g., equal to) the delay of theclock signal through clock path 310 of first stage 306. First stage 306divides the data signal and the clock signal between the plurality ofsecond stages 312 ₁ to 312 _(N). First stage 306 passes data alignedwith a first clock cycle (CLK₁) to second stage 312 ₁ through datasignal path 309 ₁ and passes the first clock cycle to second stage 312 ₁through clock signal path 311 ₁. First stage 306 passes data alignedwith a second clock cycle (CLK₂) to second stage 312 ₂ through datasignal path 309 ₂ and passes the second clock cycle to second stage 312₂ through clock signal path 311 ₂. Likewise, first stage 306 passes dataaligned with an Nth clock cycle (CLK_(N)) to second stage 312 _(N)through data signal path 309 _(N) and passes the Nth clock cycle tosecond stage 312 _(N) through clock signal path 311 _(N). Once the Nthclock cycle is reached, first stage 306 passes the N+1 clock cycle andthe data aligned with the N+1 clock cycle to second stage 312 ₁ and theprocess repeats.

The second stages 312 ₁ to 312 _(N) may be substantially identical inthat each second stage may process data by performing the sameoperations. Each second stage 312 ₁ to 312 _(N) may process datareceived from first stage 306 at a second data rate equal to or lessthan the clock rate times the number of second stages 312 ₁ to 312 _(N).For example, for a clock rate of 10 ns and where N is equal to three,each second stage 312 ₁ to 312 _(N) may process data within a 30 ns datarate (i.e., 30 ns per unit of data processed). This 30 ns data rate maybe a maximum value and each second stage 312 ₁ to 312 _(N) may processthe data faster than at a 30 ns data rate. In any case, each secondstage 312 ₁ to 312 _(N) may use more than one clock cycle of the clocksignal and up to N clock cycles of the clock signal to process data. Thedelay of data through each data path 314 ₁ to 314 _(N) may besubstantially equal to (e.g., equal to) the delay of each clock signalthrough each clock path 316 ₁ to 316 _(N) of each second stage 312 ₁ to312 _(N), respectively.

After processing of the data in second stage 312 ₁ is complete, secondstage 312 ₁ passes the processed data aligned with the first clock cycleto third stage 318 through data signal path 315 ₁ and passes the firstclock cycle to third stage 318 through clock signal path 317 ₁. Afterprocessing of the data in second stage 312 ₂ is complete, second stage312 ₂ passes the processed data aligned with the second clock cycle tothird stage 318 through data signal path 315 ₂ and passes the secondclock cycle to third stage 318 through clock signal path 317 ₂.Likewise, after processing of the data in second stage 312 _(N) iscomplete, second stage 312 _(N) passes the processed data aligned withthe Nth clock cycle to third stage 318 through data signal path 315 _(N)and passes the Nth clock cycle to third stage 318 through clock signalpath 317 _(N). Once the Nth clock cycle is reached, second stage 312 ₁passes the N+1 clock cycle and the processed data aligned with the N+1clock cycle to third stage 318 and the process repeats.

Third stage 318 merges the data signal and the clock signal from each ofthe plurality of second stages 312 ₁ to 312 _(N) to provide a mergeddata signal and a return clock signal. Third stage 318 may process datain response to the clock signal at the first data rate, which aspreviously described is equal to the clock rate of the clock signal. Thedelay of data through data path 320 may be substantially equal to (e.g.,equal to) the delay of the clock signal through clock path 322 of thirdstage 318. Data path 320 of third stage 318 merges the processed datafrom each second stage 312 ₁ to 312 _(N) to provide merged data on datasignal path 324. Clock path 322 of third stage 318 merges the clockcycles from each second stage 312 ₁ to 312 _(N) to provide a returnclock signal on return clock signal path 326. According, the merged dataon data signal path 324 is aligned with the return clock signal onreturn clock signal path 326.

The merged data on data signal path 324 is latched into data latch 328in response to the return clock signal on return clock signal path 326.The data is output to data node 330 from data latch 328 in response to aclock signal from clock node 332. Accordingly, wave pipeline 300includes an N-way wave architecture (i.e., via the group of secondstages 312 ₁ to 312 _(N)) where the clock signal and the data signal aresent to one of the ways every Nth clock cycle. The results are thenmerged together to generate the merged data signal and the return clocksignal. By using an N-way wave architecture for a stage in a wavepipeline, the data rate of each way of that stage may be reduced by Ntimes the data rate of the wave pipeline as a whole. As a result, a slowstage in the wave pipeline may not limit the maximum transfer rate toand from that stage.

FIG. 4 is a schematic diagram illustrating one embodiment of an outputdata path 400. In one example, output data path 400 is a portion of thememory device 100 previously described and illustrated with reference toFIG. 1. Output data path 400 may include a read enable RE# clock signalnode (e.g., pad) 402, a clock generator 406, an address counter 416, aclock demultiplexer 414, an address demultiplexer 424, a first sensingdevice 430 ₁, a second sensing device 430 ₂, a data multiplexer 440, aclock multiplexer 448, buffers 410, 420, 444, and 452, a FIFO 456, anddata node(s) (e.g., pad(s)) DQ(s) 460. Each sensing device 430 ₁ and 430₂ includes a data path including a sense amplifier 432 ₁ and 432 ₂ and aclock path 434 ₁ and 434 ₂, respectively. First sensing device 430 ₁ andsecond sensing device 430 ₂ provide a two-way sensing stage.

RE# clock signal pad 402 is electrically coupled to an input of clockgenerator 406 through a signal path 404. An output of clock generator406 is electrically coupled to the exit clock input (EXT) of FIFO 456,the input of buffer 410, and the input of address counter 416 through aclock signal path 408. The output of buffer 410 is electrically coupledto the input of clock demultiplexer 414 through a clock signal path 412.An output of address counter 416 is communicatively coupled to the inputof buffer 420 through an address signal path 418. The output of buffer420 is communicatively coupled to the input of address demultiplexer 424through an address signal path 422. A first output of clockdemultiplexer 414 is electrically coupled to the input of clock path 434₁ of first sensing device 430 ₁ through a clock signal path 428 ₁. Asecond output of clock demultiplexer 414 is electrically coupled to theinput of clock path 434 ₂ of second sensing device 430 ₂ through a clocksignal path 428 ₂. A first output of address demultiplexer 424 iscommunicatively coupled to the input of sense amplifier 432 ₁ of firstsensing device 430 ₁ through an address signal path 426 ₁. A secondoutput of address demultiplexer 424 is communicatively coupled to theinput of sense amplifier 432 ₂ of second sensing device 430 ₂ through anaddress signal path 426 ₂.

The output of sense amplifier 432 ₁ of first sensing device 430 ₁ iscommunicatively coupled to a first input of data multiplexer 440 througha data path 436 ₁. The output of sense amplifier 432 ₂ of second sensingdevice 430 ₂ is communicatively coupled to a second input of datamultiplexer 440 through a data path 436 ₂. The output of clock path 434₁ of first sensing device 430 ₁ is electrically coupled to a first inputof clock multiplexer 448 through a clock signal path 438 ₁. The outputof clock path 434 ₂ of second sensing device 430 ₂ is electricallycoupled to a second input of clock multiplexer 448 through a clocksignal path 438 ₂. The output of data multiplexer 440 is communicativelycoupled to the input of buffer 444 through a data path 442. The outputof buffer 444 is communicatively coupled to the data input of FIFO 456through a data path 446. The output of clock multiplexer 448 iselectrically coupled to the input of buffer 452 through a return clocksignal path 450. The output of buffer 452 is electrically coupled to theentrance clock input (ENT) of FIFO 456 through a return clock signalpath 454. The data output of FIFO 456 is communicatively coupled toDQ(s) 460 through a data path 458. The data width of FIFO 456 may equalthe data width of data path 446. FIFO 456 may have any suitable numberof stages based on the particular configuration of the memory device.

In one example, DQ(s) 460 is a single data pad, and data paths 436 ₁,436 ₂, 442, 446, and 458 are corresponding single bit data paths. Inother examples, DQ(s) 460 are multiple data pads (e.g., eight data pads,sixteen data pads), and data paths 436 ₁, 436 ₂, 442, 446, and 458 aremultiple bit parallel data paths. A serializer (not shown) may beincluded on data path 458 between FIFO 456 and each DQ 460 to serializeparallel data from FIFO 456 for output on DQ(s) 460. In this case, thedata width of FIFO 456 and data paths 436 ₁, 436 ₂, 442, and 446 may bea multiple of the number of DQ(s) 460. For example, for four DQs 460 andan eight bit serializer for each DQ 460, the data width of FIFO 456 anddata paths 436 ₁, 436 ₂, 442, and 446 is 32 bits for a double data rate(DDR) memory.

Clock generator 406 receives the RE# clock signal and generates a clocksignal on clock signal path 408. In one example, clock generator 406reduces the clock rate of the RE# clock signal so that the datathroughput on data paths 442 and 446 may be equal to the number of DQs460. For example, for eight DQs 460 and a data width of 8×8=64 bits,clock generator 406 divides the RE# clock signal by four to provide theclock signal on clock signal path 408. The internal data bus is clockedby a single edge per cycle of the divided-down clock while theserializers and DQs are clocked by both edges per RE# clock cycle. Thereduced clock rate for the internal data bus may be used to relax theinternal timing requirements. The more reduced the internal clock rate,however, the wider the internal data bus generally needs to be tomaintain the data throughput. Since a wider data bus may add layout costand design complexity, however, there is a tradeoff between the data buswidth and the internal clock rate.

Buffer 410 may delay the clock signal on clock signal path 408 toprovide the clock signal (CLK) on clock signal path 412. Address counter416 generates an address signal for first sensing device 430 ₁ andsecond sensing device 430 ₂ in response to the clock signal on clocksignal path 408. Address counter 416 provides the address signal onsignal path 418. Buffer 420 may delay the address signal on addresssignal path 418 to provide the address signal (ADDRESS) on addresssignal path 422. The clock signal on clock signal path 412 may be routedalong with the address signal on address signal path 422 such that boththe clock signal and the address signal are subjected to substantiallythe same delay due to the routing and PVT variations. The delay ofbuffers 410 and 420 may be adjusted to improve the alignment of theclock signal with the address signal.

Clock demultiplexer 414 divides the clock signal on clock signal path412 between first sensing device 430 ₁ and second sensing device 430 ₂.Clock demultiplexer 414 provides a first clock cycle to first sensingdevice 430 ₁ through clock signal path 428 ₁ and a second clock cyclefollowing (e.g., immediately following) the first clock cycle to secondsensing device 430 ₂ through clock signal path 428 ₂. Clockdemultiplexer 414 continues to repeat the process by providing a thirdclock cycle following (e.g., immediately following) the second clockcycle to first sensing device 430 ₁ through clock signal path 428 ₁ anda fourth clock cycle following (e.g., immediately following) the thirdclock cycle to second sensing device 430 ₂ through clock signal path 428₂, etc.

Address demultiplexer 424 receives the address signal on address signalpath 422 to select either first sensing device 430 ₁ or second sensingdevice 430 ₂ in response to the address signal. Address demultiplexer424 provides a first address to first sensing device 430 ₁ throughaddress signal path 426 ₁ aligned with the first clock cycle to selectfirst sensing device 430 ₁ and a second address to second sensing device430 ₂ through address signal path 426 ₂ aligned with the second clockcycle to select second sensing device 430 ₂. Address demultiplexer 424continues to repeat the process by providing the first address to firstsensing device 430 ₁ through address signal path 426 ₁ aligned with thethird clock cycle to select first sensing device 430 ₁ and the secondaddress to second sensing device 430 ₂ through address signal path 426 ₂aligned with the fourth clock cycle to select second sensing device 430₂, etc.

First sensing device 430 ₁ senses first data via sense amplifier 432 ₁from an array of memory cells (e.g., memory array 104 of FIG. 1) inresponse to the first address on address signal path 426 ₁ and the firstclock cycle on clock signal path 428 ₁. First sensing device 430 ₁outputs the first data on data path 436 ₁ aligned with the first clockcycle on clock signal path 438 ₁. Likewise, second sensing device 430 ₂senses second data via sense amplifier 432 ₂ from the array of memorycells in response to the second address on address signal path 426 ₂ andthe second clock cycle on clock signal path 428 ₂. Second sensing device430 ₂ outputs the second data on data path 436 ₂ aligned with the secondclock cycle on clock signal path 438 ₂.

Data multiplexer 440 merges the first data on data path 436 ₁ from firstsensing device 430 ₁ and the second data on data path 436 ₂ from secondsensing device 430 ₂ onto data path 442. Clock multiplexer 448 mergesthe first clock cycle on clock signal path 438 ₁ from first sensingdevice 430 ₁ and the second clock cycle on clock signal path 438 ₂ fromsecond sensing device 430 ₂ onto return clock signal path 450 to providea return clock signal aligned with the data on the data path 442. Thedata on data path 442 is delayed by buffer 444 to provide the data ondata path 446. The return clock signal on return clock signal path 450is delayed by buffer 452 to provide a return clock signal on returnclock signal path 454. The data on data paths 442 and 446 may be routedalong with the return clock signal on return clock signal paths 450 and454 such that the return clock signal and the data may be subjected tosubstantially the same delay due to the PVT variations. The delay ofbuffers 444 and 452 may be adjusted to improve the alignment of thereturn clock signal with the data. The return clock signal at the ENTinput of FIFO 456 triggers the latching of the data at the input of FIFO456 into FIFO 456. The clock signal on clock signal path 408 clocks dataout of FIFO 456 to DQ(s) 460.

FIG. 5 is a timing diagram 470 illustrating one embodiment of the dataand clock signals of output data path 400 described with reference toFIG. 4. Timing diagram 470 includes the clock signal (CLK) on clocksignal path 412, the data from sense amplifier 432 ₁ (SA 1 OUT) on datapath 436 ₁, the data from sense amplifier 432 ₂ (SA 2 OUT) on data path436 ₂, the return clock signal (CLK_RTN) on return clock signal path450, and the merged data on data path 442. A first clock cycle at 472 ispassed to first sensing device 430 ₁. In response, sense amplifier 432 ₁outputs first data (DATA 0) at 474 on data path 436 ₁ within two clockcycles of the clock signal. The first data is then passed to data path442 and the first clock cycle is passed to return clock signal path 450to provide the first data at 478 of the merged data aligned with thefirst clock cycle at 476 of the return clock signal. A second clockcycle at 480 is passed to second sensing device 430 ₂. In response,sense amplifier 432 ₂ outputs second data (DATA 1) at 482 on data path436 ₂ within two clock cycles of the clock signal. The second data isthen passed to data path 442 and the second clock cycle is passed toreturn clock signal path 450 to provide the second data at 486 of themerged data aligned with the second clock cycle at 484 of the returnclock signal. The process is then repeated such that a third clock cycleat 488 is passed to first sensing device 430 ₁. In response, first senseamplifier 432 ₁ outputs third data (DATA 2) at 490 on data path 436 ₁within two clock cycles of the clock signal. The third data is thenpassed to data path 442 and the third clock cycle is passed to returnclock signal path 450 to provide the third data at 494 of the mergeddata aligned with the third clock cycle at 492 of the return clocksignal, etc.

By using the two-way architecture for a sensing stage as described withreference to FIGS. 4 and 5, the data rate of each sensing device of thesensing stage can be halved without affecting the transmission speed toand from the stage. In this example, the clock cycle time is 10 ns.Therefore, in this example, each way of the sensing stage has 20 ns tosense the data from the memory array. By using the two-way architecture,the bus width may be reduced from a 128 bit bus with a 20 ns cycle timeto a 64 bit bus with a 10 ns cycle time.

FIG. 6 is a timing diagram 500 illustrating one embodiment of thetriggering of data out of a sense amplifier of the output data path 400described with reference to FIG. 4. Timing diagram 500 illustrates thedata at a sense amplifier, such as sense amplifier 432 ₁ or 432 ₂, andthe clock signal at the sense amplifier. As indicated at 502, the risingedge of the clock signal may trigger the data out of the sense amplifierto provide the data on data paths 436 ₁ or 436 ₂, respectively. Theclock signal at each sense amplifier for the two-way architecture mayinclude every other clock cycle of the clock signal.

FIG. 7 is a timing diagram 506 illustrating one embodiment of thelatching of data into FIFO 456 of the output data path 400 describedwith reference to FIG. 4. Timing diagram 506 illustrates the data at theinput of FIFO 456, the return clock signal at the ENT input of FIFO 456,and the data latched in FIFO 456. The setup and hold time margin for thedata at the data input of FIFO 456 is indicated at 508. As indicated at510, the falling edge of the return clock signal may latch the data intoFIFO 456. By using the falling edge of the return clock signal to latchthe data into FIFO 456, the maximum setup and hold time indicated at 508may be inherently provided since the falling edge of the return clocksignal may be automatically located at the center of the data eyeopening. Thus, any timing window loss at the FIFO input due to thevariation of the rising edge shift delay may be mitigated or eliminated.

FIG. 8 is a schematic diagram illustrating one embodiment of an inputdata path 600. In one example, input data path 600 is a portion of thememory device 100 previously described and illustrated with reference toFIG. 1. Input data path 600 may include a read enable RE# clock signalnode (e.g., pad) 602, a clock generator 606, an address counter 616,data node(s) (e.g., pad(s)) DQ(s) 626, buffers 610, 620, and 630, aclock demultiplexer 614, an address demultiplexer 624, a datademultiplexer 634, a first writing device 642 ₁ (e.g., a first senseamplifier), and a second writing device 642 ₂ (e.g., a second senseamplifier). First writing device 642 ₁ and second writing device 642 ₂provide a two-way writing stage.

RE# clock signal pad 602 is electrically coupled to an input of clockgenerator 606 through a signal path 604. An output of clock generator606 is electrically coupled to the input of buffer 610 and the input ofaddress counter 616 through a clock signal path 608. The output ofbuffer 610 is electrically coupled to the input of clock demultiplexer614 through a clock signal path 612. An output of address counter 616 iscommunicatively coupled to the input of buffer 620 through an addresssignal path 618. The output of buffer 620 is communicatively coupled tothe input of address demultiplexer 624 through an address signal path622. DQ(s) 626 are communicatively coupled to the input of buffer 630through a data path 628. The output of buffer 630 is communicativelycoupled to the input of data demultiplexer 634 through a data path 632.

A first output of clock demultiplexer 614 is electrically coupled to theclock input of first writing device 642 ₁ through a clock signal path640 ₁. A second output of clock demultiplexer 614 is electricallycoupled to the clock input of second writing device 642 ₂ through aclock signal path 640 ₂. A first output of address demultiplexer 624 iscommunicatively coupled to the address input of first writing device 642₁ through an address signal path 636 ₁. A second output of addressdemultiplexer 624 is communicatively coupled to the address input ofsecond writing device 642 ₂ through an address signal path 636 ₂. Afirst output of data demultiplexer 634 is communicatively coupled to thedata input of first writing device 642 ₁ through a data path 638 ₁. Asecond output of data demultiplexer 634 is communicatively coupled tothe data input of second writing device 642 ₂ through a data path 638 ₂.

Clock generator 606 receives the RE# clock signal and generates a clocksignal on clock signal path 608. Buffer 610 may delay the clock signalon clock signal path 608 to provide the clock signal (CLK) on clocksignal path 612. Address counter 616 generates an address signal forfirst writing device 642 ₁ and second writing device 642 ₂ in responseto the clock signal on clock signal path 608. Address counter 616provides the address signal on address signal path 618. Buffer 620 maydelay the address signal on address signal path 618 to provide theaddress signal (ADDRESS) on address signal path 622. DQ(s) 626 receivedata and pass the data to buffer 630 through data path 628. Buffer 630may delay the data on data path 628 to provide the data (DATA) on datapath 632. The clock signal on clock signal path 612 may be routed alongwith the address signal on address signal path 622 and the data on datapath 632 such that the clock signal, the address signal, and the datamay be subjected to substantially the same delay due to the PVTvariations. The delay of buffers 610, 620, and 630 may be adjusted toimprove the alignment of the clock signal with the address signal andthe data.

Clock demultiplexer 614 divides the clock signal on clock signal path612 between first writing device 642 ₁ and second writing device 642 ₂.Clock demultiplexer 614 provides a first clock cycle to first writingdevice 642 ₁ through clock signal path 640 ₁ and a second clock cyclefollowing (e.g., immediately following) the first clock cycle to secondwriting device 642 ₂ through clock signal path 640 ₂. Clockdemultiplexer 614 continues to repeat the process by providing a thirdclock cycle following (e.g., immediately following) the second clockcycle to first writing device 642 ₁ through clock signal path 640 ₁ anda fourth clock cycle following (e.g., immediately following) the thirdclock cycle to second writing device 642 ₂ through clock signal path 640₂, etc.

Address demultiplexer 624 receives the address signal on address signalpath 622 to select either first writing device 642 ₁ or second writingdevice 642 ₂ in response to the address signal. Address demultiplexer624 provides a first address to first writing device 642 ₁ throughaddress signal path 636 ₁ aligned with the first clock cycle to selectfirst writing device 642 ₁ and a second address to second writing device642 ₂ through address signal path 636 ₂ aligned with the second clockcycle to select second writing device 642 ₂. Address demultiplexer 624may continue to repeat the process by providing the first address tofirst writing device 642 ₁ through address signal path 636 ₁ alignedwith the third clock cycle to select first writing device 642 ₁ and thesecond address to second writing device 642 ₂ through address signalpath 636 ₂ aligned with the fourth clock cycle to select second writingdevice 642 ₂, etc.

Data demultiplexer 634 divides the data signal on data path 632 betweenfirst writing device 642 ₁ and second writing device 642 ₂. Datademultiplexer 634 provides first data to first writing device 642 ₁through data path 638 ₁ aligned with the first clock cycle and the firstaddress and second data to second writing device 642 ₂ through data path638 ₂ aligned with the second clock cycle and the second address. Datademultiplexer 634 may continue to repeat the process by providing thirddata to first writing device 642 ₁ through data path 638 ₁ aligned withthe third clock cycle and the first address and fourth data to secondwriting device 642 ₂ through data path 638 ₂ aligned with the fourthclock cycle and the second address, etc.

First writing device 642 ₁ writes the first data to an array of memorycells (e.g., memory array 104 of FIG. 1) in response to the firstaddress on address signal path 636 ₁ and the first clock cycle on clocksignal path 640 ₁. Likewise, second writing device 642 ₂ writes thesecond data to the array of memory cells in response to the secondaddress on address signal path 636 ₂ and the second clock cycle on clocksignal path 640 ₂. By using the two-way architecture for a writing stageas illustrated in FIG. 8, the data rate of the writing stage can behalved without affecting the transmission speed to the stage.

FIG. 9 is a schematic diagram illustrating another embodiment of anoutput data path 700. Output data path 700 is similar to output datapath 400 previously described and illustrated with reference to FIG. 4,except that output data path 700 includes two groups 702 ₁ and 702 ₂ ofsensing stages in place of the single group of sensing stages of outputdata path 400. While output data path 700 includes two groups 702 ₁ and702 ₂, in other examples output data path 700 may include any suitablenumber of groups. Output data path 700 may include a read enable RE#clock signal node (e.g., pad) 402, a clock generator 406, an addresscounter 416, buffers 410, 420, 444, and 452, a FIFO 456, and datanode(s) (e.g., pad(s)) DQ(s) 460 as previously described and illustratedwith reference to FIG. 4. In addition, each group 702 ₁ and 702 ₂includes a clock demultiplexer 414, an address demultiplexer 424, afirst sensing device 430 ₁, a second sensing device 430 ₂, a datamultiplexer 440, and a clock multiplexer 448 as previously described andillustrated with reference to FIG. 4. Group 702 ₁ also includes buffers704 ₁ and 706 ₁ and group 702 ₂ also includes buffers 704 ₂ and 706 ₂.Output data path 700 also includes a data multiplexer 712 and a clockmultiplexer 714.

Clock signal path 412 is electrically coupled to the input of clockdemultiplexer 414 of both groups 702 ₁ and 702 ₂. Address signal path422 is communicatively coupled to the input of address demultiplexer 424of both groups 702 ₁ and 702 ₂. The output of data multiplexer 440 ofgroup 702 ₁ is communicatively coupled to the input of buffer 704 ₁through a data path 703 ₁. The output of buffer 704 ₁ is communicativelycoupled to a first input of data multiplexer 712 through a data path 708₁. The output of clock multiplexer 448 of group 702 ₁ is electricallycoupled to the input of buffer 706 ₁ through a clock signal path 705 ₁.The output of buffer 706 ₁ is electrically coupled to a first input ofclock multiplexer 714 through a clock signal path 710 ₁. The output ofdata multiplexer 440 of group 702 ₂ is communicatively coupled to theinput of buffer 704 ₂ through a data path 703 ₂. The output of buffer704 ₂ is communicatively coupled to a second input of data multiplexer712 through a data path 708 ₂. The output of clock multiplexer 448 ofgroup 702 ₂ is electrically coupled to the input of buffer 706 ₂ througha clock signal path 705 ₂. The output of buffer 706 ₂ is electricallycoupled to a second input of clock multiplexer 714 through a clocksignal path 710 ₂. The output of data multiplexer 712 is communicativelycoupled to data path 442, and the output of clock multiplexer 714 iscommunicatively coupled to return clock signal path 450.

In this example, one of groups 702 ₁ and 702 ₂ is active while the otherof groups 702 ₁ and 702 ₂ is inactive. Each group 702 ₁ and 702 ₂ mayoperate similarly to the single group previously described andillustrated with reference to FIG. 4 except that the address signal onaddress signal path 422 may also select which group is active.

Data multiplexer 712 merges the data on data path 708 ₁ from group 702 ₁and the data on data path 708 ₂ from group 702 ₂ onto data path 442.Clock multiplexer 714 merges the clock signal on clock signal path 710 ₁from group 702 ₁ and the clock signal on clock signal path 710 ₂ fromgroup 702 ₂ onto return clock signal path 450 to provide the returnclock signal aligned with the data on the data path 442.

FIG. 10 is a schematic diagram illustrating another embodiment of anoutput data path 800. Output data path 800 is similar to output datapath 400 previously described and illustrated with reference to FIG. 4,except that output data path 800 includes sensing devices 430 ₁ to 430_(N), where “N” is any suitable number of sensing stages. In thisexample, each output of clock demultiplexer 414 is electrically coupledto the input of a clock path 434 ₁ to 434 _(N) through a clock signalpath 428 ₁ to 428 _(N), respectively. Each output of addressdemultiplexer 424 is communicatively coupled to the input of a senseamplifier 432 ₁ to 432 _(N) through an address signal path 426 ₁ to 426_(N), respectively. The output of each sense amplifier 432 ₁ to 432 _(N)is communicatively coupled to an input of data multiplexer 440 through adata path 436 ₁ to 436 _(N), respectively. The output of each clock path434 ₁ to 434 _(N) of sensing devices 430 ₁ to 430 _(N) is electricallycoupled to an input of clock multiplexer 448 through a clock signal path438 ₁ to 438 _(N), respectively.

In the N-way architecture illustrated in FIG. 10, each sensing device430 ₁ to 430 _(N) receives a clock cycle and an address aligned with theclock cycle for selecting the sensing device every Nth clock cycle. Byusing the N-way architecture for a sensing stage, the data rate of eachsensing device 430 ₁ to 430 _(N) of the sensing stage can be reduced byN times the clock rate without affecting the transmission speed to andfrom the stage. For example, for a clock rate of 10 ns and where Nequals five, each sensing device 430 ₁ to 430 _(N) has 50 ns to sensethe data from the memory array.

FIG. 11 is a flow diagram illustrating one embodiment of a method 900for processing data through a wave pipeline. At 902, method 900 includesreceiving a data signal and a clock signal at an input of a first stage.At 904, method 900 includes dividing the data signal and the clocksignal at an output of the first stage between inputs of a plurality ofsecond stages by passing respective data and a respective clock cyclealigned with the data to each second stage. At 906, method 900 includesprocessing the data through each second stage in response to the clockcycle aligned with the data. In one example, processing the data througheach second stage includes processing the data through each second stagewithin a number of clock cycles of the clock signal equal to the numberof second stages. At 908, method 900 includes merging the processed dataand the clock cycle aligned with the data from outputs of the pluralityof second stages at an input to a third stage to provide processedmerged data and a return clock signal aligned with the merged data.Method 900 may also include latching the processed merged data in a datalatch in response to the return clock signal. In addition, method 900may include delaying the clock cycle within each second stage a numberof clock cycles of the clock signal equal to the number of secondstages.

FIG. 12 is a flow diagram illustrating one embodiment of a method 920for reading data from an array of memory cells. At 922, method 920includes passing an address signal to one of a plurality of sensingdevices coupled in parallel in response to a corresponding clock cycleof a clock signal, e.g., in response to a rising or falling edge of thecorresponding clock cycle of the clock signal. In one example, theaddress signal is generated in response to the clock signal. At 924,method 920 includes sensing data from an array of memory cells via eachsensing device in response to the address signal and the correspondingclock cycle of the clock signal. In one example, each of the pluralityof sensing devices senses data from the array of memory cells within anumber of clock cycles of the clock signal equal to the number ofsensing devices. At 926, method 920 includes merging the sensed datafrom each of the plurality of sensing devices onto a data path. At 928,method 920 includes merging the clock cycles from each of the sensingdevices onto a return clock signal path to provide a return clocksignal. Method 920 may also include triggering a data latch to latch thedata on the data path into the data latch in response to the returnclock signal on the return clock signal path. In addition, method 920may include triggering the data latch to output data to a data node inresponse to the clock signal.

FIG. 13 is a flow diagram illustrating one embodiment of a method 940for writing data to an array of memory cells. At 942, method 940includes receiving a data signal, an address signal, and a clock signalaligned with the data signal and the address signal. In one example, theclock signal is generated based on a read enable signal. The addresssignal may be generated in response to the clock signal. At 944, method940 includes dividing the data signal, the address signal, and the clocksignal to provide first data and a first address aligned with a firstclock cycle, and second data and a second address aligned with a secondclock cycle. At 946, method 940 includes writing the first data to anarray of memory cells based on the first address via a first writingdevice in response to the first clock cycle. At 948, method 940 includeswriting the second data to the array of memory cells based on the secondaddress via a second writing device in response to the second clockcycle. In one example, writing the first data exceeds one clock cycle ofthe clock signal and writing the second data exceeds one clock cycle ofthe clock signal.

Method 940 may also include passing the first data to the first writingdevice via a first data path, passing the first address to the firstwriting device via a first address path, and passing the first clockcycle to the first writing device via a first clock path. In addition,method 940 may include passing the second data to the second writingdevice via a second data path, passing the second address to the secondwriting device via a second address path, and passing the second clockcycle to the second writing device via a second clock path.

CONCLUSION

Although specific embodiments have been illustrated and describedherein, it will be appreciated by those of ordinary skill in the artthat any arrangement that is calculated to achieve the same purpose maybe substituted for the specific embodiments shown. Many adaptations ofthe embodiments will be apparent to those of ordinary skill in the art.Accordingly, this application is intended to cover any adaptations orvariations of the embodiments.

What is claimed is:
 1. A system comprising: a first sensing device tosense first data from an array of memory cells in response to a firstclock cycle of a clock signal, the sensing of the first data exceedingone clock cycle of the clock signal; a second sensing device to sensesecond data from the array of memory cells in response to a second clockcycle of the clock signal, the second clock cycle following the firstclock cycle and the sensing of the second data exceeding one clock cycleof the clock signal; and a data multiplexer to merge the first data fromthe first sensing device and the second data from the second sensingdevice onto a data path.
 2. The system of claim 1, wherein the firstsensing device senses the first data within two clock cycles of theclock signal, and wherein the second sensing device senses the seconddata within two clock cycles of the clock signal.
 3. The system of claim1, further comprising: an address demultiplexer to receive an addresssignal and pass a first address to the first sensing device aligned withthe first clock cycle and pass a second address to the second sensingdevice aligned with the second clock cycle.
 4. The system of claim 3,further comprising: an address counter to receive the clock signal andprovide the address signal in response to the clock signal.
 5. Thesystem of claim 1, further comprising: a clock demultiplexer to receivethe clock signal and pass the first clock cycle to the first sensingdevice and pass the second clock cycle to the second sensing device; anda clock multiplexer to merge the first clock cycle from the firstsensing device and the second clock cycle from the second sensing deviceonto a return clock signal path to provide a return clock signal alignedwith the data on the data path.
 6. The system of claim 5, furthercomprising: a data latch to latch the data on the data path into thedata latch in response to the return clock signal on the return clocksignal path.
 7. The system of claim 6, wherein the data latch outputsdata to a data node in response to the clock signal on the clock signalpath.
 8. The system of claim 1, further comprising: a clock generator toreceive a read enable signal and to generate the clock signal based onthe read enable signal.
 9. A system comprising: a first writing deviceto write first data to an array of memory cells in response to a firstclock cycle of a clock signal, the write of the first data exceeding oneclock cycle of the clock signal; and a second writing device in parallelwith the first writing device, the second writing device to write seconddata to the array of memory cells in response to a second clock cycle ofthe clock signal, the second clock cycle following the first clock cycleand the write of the second data exceeding one clock cycle of the clocksignal.
 10. The system of claim 9, wherein the first writing device isto write the first data within two clock cycles of the clock signal, andwherein the second writing device is to write the second data within twoclock cycles of the clock signal.
 11. The system of claim 9, furthercomprising: an address demultiplexer to receive an address signal andpass a first address to the first writing device aligned with the firstclock cycle and pass a second address to the second writing devicealigned with the second clock cycle.
 12. The system of claim 11, furthercomprising: an address counter to receive the clock signal and providethe address signal in response to the clock signal.
 13. The system ofclaim 9, further comprising: a clock demultiplexer to receive the clocksignal and pass the first clock cycle to the first writing device andpass the second clock cycle to the second writing device.
 14. The systemof claim 9, further comprising: a data demultiplexer to receive a datasignal and pass the first data to the first writing device aligned withthe first clock cycle and pass the second data to the second writingdevice aligned with the second clock cycle.
 15. The system of claim 14,further comprising: data pads to receive the data signal.
 16. The systemof claim 9, further comprising: a clock generator to receive a readenable signal and generate the clock signal based on the read enablesignal.
 17. A method comprising: receiving a data signal and a clocksignal at an input of a first stage; dividing the data signal and theclock signal at an output of the first stage between inputs of aplurality of second stages by passing respective data and a respectiveclock cycle aligned with the data to each second stage; processing thedata through each second stage in response to the clock cycle alignedwith the data; and merging the processed data and the clock cyclealigned with the data from outputs of the plurality of second stages atan input to a third stage to provide processed merged data and a returnclock signal aligned with the merged data.
 18. The method of claim 17,further comprising: latching the processed merged data in a data latchin response to the return clock signal.
 19. The method of claim 17,wherein processing the data through each second stage comprisesprocessing the data through each second stage within a number of clockcycles of the clock signal equal to the number of second stages.
 20. Themethod of claim 17, further comprising: delaying the clock cycle withineach second stage a number of clock cycles of the clock signal equal tothe number of second stages.
 21. A method comprising: passing an addresssignal to one of a plurality of sensing devices coupled in parallel inresponse to a corresponding clock cycle of a clock signal; sensing datafrom an array of memory cells via each sensing device in response to theaddress signal and the corresponding clock cycle of the clock signal;merging the sensed data from each of the plurality of sensing devicesonto a data path; and merging the clock cycles from each of the sensingdevices onto a return clock signal path to provide a return clocksignal.
 22. The method of claim 21, wherein each of the plurality ofsensing devices senses data from the array of memory cells within anumber of clock cycles of the clock signal equal to the number ofsensing devices.
 23. The method of claim 21, further comprising:triggering a data latch to latch the data on the data path into the datalatch in response to the return clock signal on the return clock signalpath.
 24. The method of claim 23, further comprising: triggering thedata latch to output data to a data node in response to the clocksignal.
 25. The method of claim 21, further comprising: generating theaddress signal in response to the clock signal.
 26. A method comprising:receiving a data signal, an address signal, and a clock signal alignedwith the data signal and the address signal; dividing the data signal,the address signal, and the clock signal to provide first data and afirst address aligned with a first clock cycle, and second data and asecond address aligned with a second clock cycle; writing the first datato an array of memory cells based on the first address via a firstwriting device in response to the first clock cycle; and writing thesecond data to the array of memory cells based on the second address viaa second writing device in response to the second clock cycle.
 27. Themethod of claim 26, further comprising: generating the clock signalbased on a read enable signal.
 28. The method of claim 26, furthercomprising: generating the address signal in response to the clocksignal.
 29. The method of claim 26, further comprising: passing thefirst data to the first writing device via a first data path; passingthe first address to the first writing device via a first address path;passing the first clock cycle to the first writing device via a firstclock path; passing the second data to the second writing device via asecond data path; passing the second address to the second writingdevice via a second address path; and passing the second clock cycle tothe second writing device via a second clock path.
 30. The method ofclaim 26, wherein writing the first data exceeds one clock cycle of theclock signal, and wherein writing the second data exceeds one clockcycle of the clock signal.